| PART |
Description |
Maker |
| IXYH40N120C3D1 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXYJ20N120C3D1 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXXH50N60B3D1 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXYH12N250CV1HV |
High Voltage XPTTM IGBT w/ Diode
|
IXYS Corporation
|
| IXYH40N120B3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| IRG4PF50W-EPBF IRG4PF50W |
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package
51 A, 900 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
International Rectifier
Vishay Intertechnology, Inc.
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| FQI3N90 FQB3N90 FQB3N90TM FQI3N90TU |
900V N-Channel MOSFET(漏源电压900V的N沟道增强型MOSFET)
900V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IXXK200N60C3 |
XPTTM 600V IGBTs
|
IXYS Corporation
|
| FQA8N90C |
900V N-Channel Q-FET
900V N-Channel MOSFET
TERMINAL 8 A, 900 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
